Bandgap and lattice constant of GaInAsP as a function of alloy composition
Autor: | G. A. Antypas, L. W. James, R. L. Moon |
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Rok vydání: | 1974 |
Předmět: | |
Zdroj: | Journal of Electronic Materials. 3:635-644 |
ISSN: | 1543-186X 0361-5235 |
DOI: | 10.1007/bf02655291 |
Popis: | Published data for the composition dependence of the room-temperature bandgap (Eg) and lattice constant (ao) in the pseudobinary GayIn1-yAs, GayIn1-yP, GaAsxPl-x, and InAsxPl-x systems have been used to derive the following equations for the quaternary GayInl-yAsx Pl-x, alloys: $$\begin{gathered} a_o ({\AA}) = 5.87 + 0.18x - 0.42y + 0.02xy \hfill \\ E_g (eV) = 1.35 - x + 1.4y - 0.33xy - (0.758 - 0.28x)y(1 - y) \hfill \\ - (0.101 + 0.109y) x(1 - x). \hfill \\ \end{gathered} $$ |
Databáze: | OpenAIRE |
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