Simulation of the geometrical characteristics of a mechanically scanned high current implanter
Autor: | Frank Sinclair |
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Rok vydání: | 1991 |
Předmět: | |
Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:482-487 |
ISSN: | 0168-583X |
DOI: | 10.1016/0168-583x(91)96217-9 |
Popis: | An understanding of the geometrical properties of the implantation process is essential for the optimization of dose control algorithms and for control of channeling effects. The EATON mechanically scanned implanters use a closed loop dose measurement system to control the scan speed in the slow direction. The input for this is provided by a measurement of the beam through a rectangular slot in the disk. Analytical calculations of the approximations involved in this approach become prohibitively complicated when one wishes to consider all possible beam shapes, angular spreads and disk geometries. For this reason, we have implemented a computer program which uses a simple approach based on a Monte Carlo simulation of the implant process. The results show that the basis of the control algorithm is sound, leading to deviations of less than 0.3% across a 150 mm wafer for all plausible beam geometries. Another feature of this approach is that it allows easy calculation of the angle with which the ion beam penetrates the wafer or other geometrical considerations. |
Databáze: | OpenAIRE |
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