RET for the wiring layer of a 3D memory
| Autor: | Yung-Tin Chen, Vishnu Kamat, Chris Petti, Paul Wai Kie Poon, Hsu-Ting Huang, Apo Sezginer |
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| Rok vydání: | 2006 |
| Předmět: |
Depth of focus
Contact pad Hardware_MEMORYSTRUCTURES Materials science Physics::Instrumentation and Detectors business.industry Edge (geometry) Line (electrical engineering) Process conditions Optics Computer data storage Electronic engineering Point (geometry) business Layer (electronics) Computer Science::Cryptography and Security |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.656725 |
| Popis: | A typical wiring layer of SanDisk 3-dimensional memory device includes a dense array of lines. Every other line terminates in an enlarged contact pad at the edge of the array. The pitch of the pads is twice the pitch of the dense array. When process conditions are optimized for the dense array, the gap between the pads becomes a weak point. The gap has a smaller depth of focus. As defocus increases, the space between the pads diminishes and bridges. We present a method of significantly increasing the depth of focus of the pads at the end of the dense array. By placing sub-resolution cutouts in the pads, we equalize the dominant pitch of the pads and the dense array. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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