Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond
| Autor: | Xia Man, Mark Kawaguchi, Ji Zhu, Ken-ichi Sano, David Mui, Rafal Dylewicz |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Soft x ray
Materials science business.industry Wet cleaning Nanotechnology 02 engineering and technology Edge (geometry) 021001 nanoscience & nanotechnology Condensed Matter Physics Wafer backgrinding Atomic and Molecular Physics and Optics Volumetric flow rate Optoelectronics General Materials Science Wafer 0210 nano-technology business |
| Zdroj: | Solid State Phenomena. 255:277-282 |
| ISSN: | 1662-9779 |
| Popis: | Wafer charging has become an issue since single-wafer wet clean has been introduced and multiple aspects could be potential root causes. In chemistry and DIW process factors, typical process parameters; flow rate and time were re-evaluated. As an alternative solution, dilute NH4OH could reduce the wafer surface charging. Hardware parts were also investigated and wafer holding chuck-pin material was revealed to become a risk of discharging failure at edge of wafer. Ionizer has been known to discharge wafer surface; however, it is not enough to remove pre-existing charge from post DIW rinsed wafer. Soft X-ray is challenged to remove pre-existing charge and obtained initial positive result. |
| Databáze: | OpenAIRE |
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