Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C

Autor:	David Bowen, Evan H. C. Parker, E. Başaran, A.R. Powell, T. Naylor, J. C. Brighten, N. L. Mattey, D. W. Smith, Terry E. Whall, R. D. Barlow, S.M. Newstead, M.G. Dowsett, C. J. Emeleus, C. P. Parry, R. A. Kubiak
Rok vydání:	1991
Předmět:	Delta Materials science Dopant Delta doping Doping Analytical chemistry chemistry.chemical_element Mineralogy Condensed Matter Physics Inorganic Chemistry chemistry Modulation Materials Chemistry Antimony doping Boron Order of magnitude
Zdroj:	Journal of Crystal Growth. 111:907-911
ISSN:	0022-0248
DOI:	10.1016/0022-0248(91)91105-j
Popis:	This paper considers the low temperature doping of (100) Si and SiGe structures with elemental B and Sb sources particularly with regard to obtaining very narrow delta doping spikes. B is found to be an excellent dopant at SiGe growth temperatures incorporating in an active state at concentrations up to 10%. B delta layers of 1 nm or less have also been grown. Sb is also shown to be capable of providing delta doped layers less than 2 nm wide. The B deltalayers have been incorporated into modulation doped structures yielding an order of magnitude increase in mobility at 77 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::172ff25ce43f221caec12e9c3917a655 https://doi.org/10.1016/0022-0248(91)91105-j Zobrazit plný text záznamu