Cathodoluminescence and Photoluminescence Spectroscopy Study of Low Temperature Molecular Beam Epitaxy GaAs

Autor:	Jerry M. Woodall, R. Enrique Viturro, Michael R. Melloch
Rok vydání:	1991
Předmět:	Materials science Photoluminescence chemistry Annealing (metallurgy) Schottky barrier Analytical chemistry chemistry.chemical_element Cathodoluminescence Spectroscopy Crystallographic defect Arsenic Molecular beam epitaxy
Zdroj:	MRS Proceedings. 241
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-241-81
Popis:	We report a cathodoluminescence (CL) and photoluminescence (PL) study of molecular beam epitaxy grown GaAs at low substrate temperatures (LT GaAs), and semi-insulating LEC GaAs. The as grown LT GaAs material shows intense deep level emissions which can be associated with an excess concentration of Arsenic. These emissions subside with annealing for a few minutes at temperatures above 450 ° C. CL measurements clearly show an extremelly reduced concentration of traps in the post-growth 600 ° C annealed material. These results account for a diminished role of electronic point defects in controlling the insulative behavior of LT GaAs and strongly support the “buried” Schottky barrier model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::172e272b5c507d0e986a1b587a79123b https://doi.org/10.1557/proc-241-81 Zobrazit plný text záznamu Full text from SpringerLink