Current Rerouting Improves Heat Removal in Few-Layer WSe2 Devices
Autor: | Zlatan Aksamija, Arnab K. Majee, Cameron J. Foss, Zahra Hemmat, Amin Salehi-Khojin |
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Rok vydání: | 2020 |
Předmět: |
Materials science
business.industry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Stack (abstract data type) Transition metal Nanoelectronics Impurity Optoelectronics General Materials Science Field-effect transistor Current (fluid) 0210 nano-technology business Self heating Layer (electronics) |
Zdroj: | ACS Applied Materials & Interfaces. 12:14323-14330 |
ISSN: | 1944-8252 1944-8244 |
Popis: | Few-layer (FL) transition metal dichalcogenides have drawn attention for nanoelectronics applications due to their improved mobility, owing to the partial screening of charged impurities at the oxi... |
Databáze: | OpenAIRE |
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