Current Rerouting Improves Heat Removal in Few-Layer WSe2 Devices

Autor: Zlatan Aksamija, Arnab K. Majee, Cameron J. Foss, Zahra Hemmat, Amin Salehi-Khojin
Rok vydání: 2020
Předmět:
Zdroj: ACS Applied Materials & Interfaces. 12:14323-14330
ISSN: 1944-8252
1944-8244
Popis: Few-layer (FL) transition metal dichalcogenides have drawn attention for nanoelectronics applications due to their improved mobility, owing to the partial screening of charged impurities at the oxi...
Databáze: OpenAIRE