Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Monte Carlo Simulation Scheme

Autor:	Takayuki Fukui, Nobuyuki Sano
Rok vydání:	2021
Předmět:	Coupling Physics Scattering Monte Carlo method Jellium Semiconductor device modeling Hartree Electric potential Statistical physics Electrical and Electronic Engineering Boltzmann equation Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 68:5394-5399
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2021.3082804
Popis:	We discuss the theoretical basis of the Boltzmann transport equation (BTE) and the Monte Carlo (MC) simulation scheme to take into account the discrete nature of impurities in semiconductor substrates. This is achieved by explicitly considering the self-consistent coupling between the BTE and Poisson’s equation and by separating the impurity potential into long- and short-range parts in those equations. We show that the Hartree potential is represented by the long-range part of the potential, whereas the scattering potential for the BTE is naturally derived within the framework, rather than an ad hoc assumption. The proposed scheme is validated by showing that MC simulations with discrete impurities in bulk can reproduce the conventional simulation results with the “jellium” impurity. Also, by including both static and dynamic potential fluctuations, the MC simulation can predict the correct mobility even under discrete impurities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::172a19b34ad4e9231dcb3bd013b443d2 https://doi.org/10.1109/ted.2021.3082804 Zobrazit plný text záznamu