Ultra-broadband 20.5–31 GHz monolithically-integrated CMOS power amplifier

Autor:	P. Weger, A. Vasylyev, W. Simburger
Rok vydání:	2005
Předmět:	Power supply rejection ratio Power-added efficiency Engineering business.industry Amplifier RF power amplifier Electrical engineering Power bandwidth Integrated circuit law.invention CMOS law Linear amplifier Electrical and Electronic Engineering business
Zdroj:	Electronics Letters. 41:1281
ISSN:	0013-5194
Popis:	A fully monolithically-integrated power amplifier with a bandwidth (−3 dB) from 20.5 to 31 GHz was realised in a 0.13 µm standard CMOS technology. A maximum power added efficiency of 13% with a corresponding output power of 13 dBm was achieved at 25.7 GHz with 1.5 V supply voltage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::17225554b108a80ddbe4645f70cb28af https://doi.org/10.1049/el:20053261 Zobrazit plný text záznamu