| Autor: |
A. Savage, Pierre Petroff, W. Wiegmann, Arthur C. Gossard |
| Rok vydání: |
1979 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 46:172-178 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(79)90053-8 |
| Popis: |
Superlattices of alternate ultra-thin layers of Ge and Ga1−xAlxAs have been deposited epitaxially on GaAs substrates by molecular beam epitaxy. The structural perfection, interface roughness and crystal growth processes for these superlattices have been analysed by transmission electron microscopy. Deposition periods of n monolayers of Ga1−xAlx As and 2m monolayers of Ge with n,m ⪖ 1 and 0 ⪕ x ⪕ 1 were examined for growth temperatures in the range of 25 to 620°C. A columnar growth regime produced by nucleation of GaAs over GaAs regions predominated in the monolayer superlattices for low x and high growth temperatures, producing epitaxial columnar structures. Smooth interfaces were produced for x = 1 down to n = m = 7 at growth temperatures below 500°C, although stacking faults were present. This behavior is interpreted in terms of atomic bond geometries, equilibrium phase diagrams and the non-equilibrium characteristics of MBE crystal growth. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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