Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters

Autor:	Arnel Salvador, Elmer Estacio, Cyril Sadia, Armando Somintac, Kohji Yamamoto, Christopher T. Que, Masahiko Tani, Joselito Muldera
Rok vydání:	2015
Předmět:	Materials science Terahertz radiation business.industry General Engineering General Physics and Astronomy Epitaxy Laser law.invention Gallium arsenide chemistry.chemical_compound chemistry Electron diffraction law Femtosecond Optoelectronics business Layer (electronics) Molecular beam epitaxy
Zdroj:	Applied Physics Express. 8:035501
ISSN:	1882-0786 1882-0778
Popis:	We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600 nm to 1.0 µm thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70% of that of bulk p-InAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::171d60001fd7ce6b6a43a96bdc1f1e2c https://doi.org/10.7567/apex.8.035501 Zobrazit plný text záznamu