TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES
| Autor: | J. KOLODZEY, T. N. ADAM, R. T. TROEGER, P.-C. LV, S. K. RAY, I. YASSIEVICH, M. ODNOBLYUDOV, M. KAGAN |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon Terahertz radiation business.industry chemistry.chemical_element Bioengineering Strained silicon Germanium Condensed Matter Physics Computer Science Applications Terahertz spectroscopy and technology Silicon-germanium chemistry.chemical_compound chemistry Optoelectronics General Materials Science Electrical and Electronic Engineering business Quantum well Biotechnology Molecular beam epitaxy |
| Zdroj: | International Journal of Nanoscience. :171-176 |
| ISSN: | 1793-5350 0219-581X |
| DOI: | 10.1142/s0219581x0400195x |
| Popis: | Terahertz (THz) electroluminescence was produced by three different types of sources: intersubband transitions in silicon germanium quantum wells, resonant state transitions in boron-doped strained silicon germanium layers, and hydrogenic transitions from dopant atoms in silicon. The devices were grown by molecular beam epitaxy, fabricated by dry etching, and characterized by infrared spectroscopy. The absorption of THz was observed in silicon germanium quantum wells at energies corresponding to heavy hole and light hole intersubband transitions. These results suggest that SiGe nanotechnology is attractive for THz device applications. |
| Databáze: | OpenAIRE |
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