Modeling of the effective mobility for polysilicon thin film transistor

Autor:	Ruo-He Yao, Bin Li, Bing-Hui Yan, Xue-Ren Zheng
Rok vydání:	2008
Předmět:	Electron mobility Materials science Silicon business.industry Scattering chemistry.chemical_element Linearity Grain size Crystal chemistry Thin-film transistor Electronic engineering Surface roughness Optoelectronics business
Zdroj:	2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
DOI:	10.1109/icsict.2008.4734528
Popis:	In this paper, a model of the effective mobility for the on-current of p-Si TFT is proposed, taking into account the gain size, the drain bias, the imperfection crystal scattering mechanism, and the surface-roughness scattering mechanism. It is found that at the linearity region, the effective mobility decreases with the drain bias increasing and increases with the grain size increasing. The simulation results are in a good agreement with the experimental data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::170c603bac7f6b1445a240023daeb52e https://doi.org/10.1109/icsict.2008.4734528 Zobrazit plný text záznamu