A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy
| Autor: | M. A. Capano, T. W. Haas, S. D. Walck, Kurt G. Eyink, B. G. Streetman |
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| Rok vydání: | 1997 |
| Předmět: |
Chemistry
Analytical chemistry nutritional and metabolic diseases food and beverages Substrate (electronics) Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Crystallography Ellipsometry Transmission electron microscopy Materials Chemistry Crystallite Electrical and Electronic Engineering Thin film Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 26:391-396 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-997-0108-6 |
| Popis: | The growth of low temperature (LT) GaAs by molecular beam epitaxy has been studied using ellipsometry. Different regimes of growth were observed in the data, depending on film thickness. Epitaxial growth of pseudomorphic LT-GaAs occurred immediately above the substrate, followed by a layer with changing dielectric properties. This upper layer can be modeled as a two-phase region consisting of epitaxial LT-GaAs and small grained, polycrystalline GaAs, which increases in volume fraction with increasing layer thickness. For sufficiently thick LT layers, cross-sectional transmission electron microscopy analysis showed pyramidal defects that were composed primarily of highly twinned regions. The ellipsometry data showed a deviation from the homogeneous growth model at a thickness less than the thickness at which the pyramidal defects nucleated in all samples. |
| Databáze: | OpenAIRE |
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