Light down-conversion with over 100% external quantum efficiency in bulk germanium
Autor: | V. K. Malyutenko, V. V. Bogatyrenko |
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Rok vydání: | 2012 |
Předmět: | |
Zdroj: | Applied Physics Letters. 101:081111 |
ISSN: | 1077-3118 0003-6951 |
Popis: | To bypass indirect bandstructure limitations in Ge and have it effectively emitting, we employ light down conversion process at elevated temperatures (emissivity enhancement technique). By applying short wavelength pump light (λin, interband electron transitions), we enhance thermal emission output in the spectral range of intraband electron transitions (λout, free carrier absorption band). We experimentally realized conditions (λin = 1.9 μm, λout = 2–25 μm, T = 380 K) when Ge wafers demonstrated power conversion efficiency of 21% and external quantum efficiency (photon multiplication coefficient) of 130%. Advantages of Ge over Si and ways to realize Ge-based radiative cooler are discussed. |
Databáze: | OpenAIRE |
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