Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors
| Autor: | Zhaobing Tian, Ted Schuler-Sandy, Jun Oh Kim, Tianmeng Wang, Yueheng Zhang, Yan-Feng Lao, A. G. Unil Perera, Sanjay Krishna, Seyoum Wolde |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Physics business.industry Shot noise General Physics and Astronomy Photodetector 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology 01 natural sciences Noise (electronics) Gallium arsenide chemistry.chemical_compound chemistry Quantum dot Electric field 0103 physical sciences Optoelectronics Flicker noise 0210 nano-technology business |
| Zdroj: | Journal of Applied Physics. 121:244501 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | We report experimental results showing how the noise in a Quantum-Dot Infrared photodetector (QDIP) and Quantum Dot-in-a-well (DWELL) varies with the electric field and temperature. At lower temperatures (below ∼100 K), the noise current of both types of detectors is dominated by generation-recombination (G-R) noise which is consistent with a mechanism of fluctuations driven by the electric field and thermal noise. The noise gain, capture probability, and carrier life time for bound-to-continuum or quasi-bound transitions in DWELL and QDIP structures are discussed. The capture probability of DWELL is found to be more than two times higher than the corresponding QDIP. Based on the analysis, structural parameters such as the numbers of active layers, the surface density of QDs, and the carrier capture or relaxation rate, type of material, and electric field are some of the optimization parameters identified to improve the gain of devices. |
| Databáze: | OpenAIRE |
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