450mm Cu single damascene BEOL process with 20nm half-pitched features

Autor:	Katherine Sieg, Christopher R. Carr, Karsten Schaefer, M. F. Chen, Christopher L. Borst, David Skilbred, Jong-heun Lim, Kosta Culafi, Milo Tallon, Norman Fish, Frank Robertson, Chulgi Song, John Hagwood, Anne-Sophie Larrea, Angelo Alaestante, Mark Kelling, ChungJu Yang, Denis Sullivan, WenLi Collision, Nithin Yathapu, Hsi-Wen Liu, Yii-Cheng Lin, Cheng-Chung Chien, Erin Fria, Regina Swaine, Gerard Stapf, Dan Franca, BumKi Moon, K. K. W. Lee, Bruce Gall, Jamie Prudhomme, Yu-Lieh Fu, Alexander Bialy, Stock Chang, Shannon Dunn, Michael Bryant, Lin Pinyen, Huey-Ming Wang, Joe Maniscalco, Richard Conti, Rand Cottle, Barry Wang, Steven Smith, Sun-OO Kim
Rok vydání:	2016
Předmět:	Engineering drawing Materials science business.industry Copper interconnect Process (computing) chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 010309 optics Lamella (surface anatomy) chemistry 0103 physical sciences Optoelectronics Wafer 0210 nano-technology Tin business Hard mask
Zdroj:	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Popis:	At 450mm wafer area, the first Cu BEOL module process was demonstrated with a single damascene structure using low-k ILD, TiN metal hard mask and guided 20nm half-pitched lamella BCP DSA patterning. It showed the potential opportunities, technical feasibility and further challenges for coming needs for 450mm equipment.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::16f5a6641fe5a8a4871bd779ed63e8be https://doi.org/10.1109/iitc-amc.2016.7507638 Zobrazit plný text záznamu