Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage

Autor:	Xinyu Li, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Xingyu Fang, Zhonghan Deng
Rok vydání:	2021
Zdroj:	Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering.
DOI:	10.1145/3501409.3501451
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::16ee33e8f62bb7f7199cb40c58643c69 https://doi.org/10.1145/3501409.3501451 Zobrazit plný text záznamu