Development of lattice-matched 1.7 eV GalnAsP solar cells grown on GaAs by MOVPE
| Autor: | Nikhil Jain, Ryuji Oshima, Ryan France, John Geisz, Andrew Norman, Pat Dippo, Dean Levi, Michelle Young, Waldo Olavarria, Myles A. Steiner |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Theory of solar cells Materials science Dopant business.industry Band gap Doping 02 engineering and technology 021001 nanoscience & nanotechnology Solar energy 01 natural sciences Polymer solar cell law.invention law 0103 physical sciences Solar cell Optoelectronics Metalorganic vapour phase epitaxy 0210 nano-technology business |
| Zdroj: | 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc.2016.7749406 |
| Popis: | To advance the state-of-the-art in III-V multijunction solar cells towards high concentration efficiencies approaching 50%, development of a high-quality ∼1.7 eV second junction solar cell is of key interest for integration in five or more junction devices. Quaternary GalnAsP solar cells grown lattice-matched on GaAs allows bandgap tunability in the range from 1.42 to 1.92 eV and offers an attractive Al-free alternative to conventional AlGaAs solar cells. In this work, we investigate the role of growth temperature towards understanding the optimal growth window for realizing high-quality GalnAsP alloys. We demonstrate bandgap tunability from 1.6 to 1.8 eV in GalnAsP alloys for compositions close to the miscibility gap, while still maintaining lattice-matched condition to GaAs. We perform an in-depth investigation to understand the impact of varying base thickness and doping concentration on the carrier collection and performance of these 1.7 eV GalnAsP solar cells. The photo-response of these cells is found to be very sensitive to p-type zinc dopant incorporation in the base layer. We demonstrate prototype 1.7 eV GalnAsP solar cell designs that leverage enhanced depletion width as an effective method to overcome this issue and boost long-wavelength carrier collection. Short-circuit current density (J sc ) measured in field-aided devices were as high as 17.25 m A/cm2. The best GalnAsP solar cell in this study achieved an efficiency of 17.2% with a J sc of 17 m A/cm2 and a fill-factor of 86.4%. The corresponding open-circuit voltage (V oc ) 1.7 eV measured on this cell represents the highest V oc reported for a 1.7 eV GalnAsP solar cell. These initial cell results are encouraging and highlight the potential of Al-free GalnAsP solar cells for integration in the next generation of III-V multijunction solar cells. |
| Databáze: | OpenAIRE |
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