TiN thin film resistors for monolithic microwave integrated circuits
| Autor: | Niklas Rorsman, Anna Malmros, Kristoffer Andersson, M. Sudow |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Process Chemistry and Technology chemistry.chemical_element Sputter deposition Titanium nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Stress (mechanics) chemistry.chemical_compound chemistry Electrical resistivity and conductivity law Materials Chemistry Electrical and Electronic Engineering Thin film Composite material Resistor Tin Instrumentation Sheet resistance |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:912-915 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.3475532 |
| Popis: | Titanium nitride (TiN) thin film resistors (TFRs) have been fabricated by reactive sputter deposition. The TFRs were characterized in terms of composition, thickness, and resistance. Furthermore, a first assessment of the resistor reliability was made by measurements of the resistivity (rho) versus temperature, electrical stress, long-term stability, and thermal infrared measurements. TiN layers with thicknesses up to 3560 angstrom, corresponding to a sheet resistance (R-s) of 10 Omega/square, were successfully deposited without any signs of stress in the films. The critical dissipated power (P-c) showed a correlation with the resistor footprint-area indicating that Joule-heating was the main cause of failure. This was partly substantiated by the thermal infrared measurements. |
| Databáze: | OpenAIRE |
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