Nanoscale Tunnel Junctions and Metallic Single-Electron Transistors via Shadow Evaporation and In Situ Atomic Layer Deposition of Tunnel Barriers
| Autor: | Keisuke Kikkawa, Masanori Miura, Ryusuke Kobayashi, Takehiro Koike, Hiroki Konno, Yoshinao Mizugaki, Naoki Ito, Kensaku Kanomata, Hiroshi Shimada, Fumihiko Hirose |
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| Rok vydání: | 2021 |
| Předmět: |
Superconductivity
Materials science business.industry Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Evaporation (deposition) law.invention Metal Atomic layer deposition Computer Science::Emerging Technologies Tunnel junction law Condensed Matter::Superconductivity visual_art visual_art.visual_art_medium Optoelectronics General Materials Science Electronics business Nanoscopic scale |
| Zdroj: | ACS Applied Nano Materials. 4:1401-1410 |
| ISSN: | 2574-0970 |
| DOI: | 10.1021/acsanm.0c02937 |
| Popis: | Nanoscale metallic tunnel junctions are important elements of state-of-the-art technologies including superconducting qubits, single electronics, nanospintronics, and caloritronics. The most widely... |
| Databáze: | OpenAIRE |
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