Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface
| Autor: | Michel Bosman, Alexander L. Shluger, Maxim N. Popov, Emilia Olsson, Jürgen Spitaler, Kamal Patel, Jonathon Cottom, M Munde, Anton S. Bochkarev |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon dioxide chemistry.chemical_element Compatibility (geochemistry) 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Titanium nitride 0104 chemical sciences Resistive random-access memory chemistry.chemical_compound chemistry Chemical engineering Electroforming Hardware_INTEGRATEDCIRCUITS Oxygen ions Oxygen diffusion General Materials Science 0210 nano-technology Tin |
| Zdroj: | ACS Applied Materials & Interfaces. 11:36232-36243 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.9b10705 |
| Popis: | Silica-based resistive random access memory devices have become an active research area due to complementary metal–oxide–semiconductor compatibility and recent dramatic increases in their performan... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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