High-efficiency, air stable graphene/Si micro-hole array Schottky junction solar cells
| Autor: | Xiwei Zhang, Chao Xie, Liu Wang, Zhibin Shao, Qing Zhang, Kaiqun Ruan, Jiansheng Jie, Xiujuan Zhang, Sunny Singh Dhaliwal |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Graphene Schottky barrier Energy conversion efficiency Doping Schottky diode Nanotechnology General Chemistry law.invention Ion Etching (microfabrication) law Optoelectronics General Materials Science Photolithography business |
| Zdroj: | Journal of Materials Chemistry A. 1:15348 |
| ISSN: | 2050-7496 2050-7488 |
| DOI: | 10.1039/c3ta13750c |
| Popis: | Graphene/Si hole array (SiHA) Schottky junctions show great promise as high-efficiency, cost-effective solar cells. However, their applications are still limited by the severe surface recombination of the nano-hole SiHA and inferior device stability arising from volatile oxidant doping. Here, we demonstrate the construction of high-efficiency graphene/SiHA devices with enhanced device performance and stability. The micro-hole SiHA fabricated by photolithography and reaction ion etching (RIE) possesses a smooth surface, thus ensuring a low surface recombination velocity. Also, the light harvesting of the micro-hole SiHA could be readily tuned by adjusting the hole depth. Introduction of the micro-hole SiHA, along with the use of AuCl3 for graphene doping, gives rise to a high power conversion efficiency (PCE) of 10.40% for the graphene/SiHA devices. Additionally, the device stability is substantially improved and shows a relatively low degradation ratio after storing in air for 3 months. It is expected that the graphene/SiHA devices will have important applications in new-generation Si solar cells. |
| Databáze: | OpenAIRE |
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