Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes

Autor:	D. A. Vanderwater, G.E. Hofler, Frederick A. Kish, Frank M. Steranka, Dennis C Defevere, K. G. Park, Daniel A. Steigerwald
Rok vydání:	1996
Předmět:	Fabrication Materials science business.industry law Optoelectronics Wafer Life test Electrical and Electronic Engineering business Diode Light-emitting diode law.invention
Zdroj:	Electronics Letters. 32:132
ISSN:	0013-5194
DOI:	10.1049/el:19960098
Popis:	Semiconductor wafer bonding is employed to fabricate very high efficiency transparent-substrate (TS) AlGaInP light-emitting diodes (LEDs) with projected lifetimes in excess of 100000 h under accelerated life test at an ambient temperature of 55/spl deg/C (70 A/cm/sup 2/). Furthermore, we demonstrate wafer-bonded TS AlGaInP red LEDs with external quantum efficiencies of 23.7% at 635.6 nm (20 mA, DC, 250/spl deg/C).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::16c7f62bb496755548e4abdfaa4f2f63 https://doi.org/10.1049/el:19960098 Zobrazit plný text záznamu