Stress relaxation in LTPS TFT backplane by architecture modulation on plastic
| Autor: | Chang Bum Park |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Transistor Bend radius 02 engineering and technology General Chemistry Bending 021001 nanoscience & nanotechnology 01 natural sciences law.invention Stress (mechanics) Backplane Thin-film transistor law 0103 physical sciences Stress relaxation General Materials Science Resilience (materials science) Composite material 0210 nano-technology |
| Zdroj: | Applied Physics A. 125 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-019-3135-2 |
| Popis: | The effect of structural design on inorganic backplanes was discussed to achieve highly bendable characteristics for flexible electronic applications. Based on a low-temperature polysilicon (LTPS) thin-film transistor backplane, the failure mechanics and tolerance of structures were implemented as a function of backplane geometry and stress value. Results showed that the strain resistance increased in the thin-film backplane by adopting island geometry under bending stress, which was against the fatigue formation with enhanced resilience. The electrical integrity of transistors was achieved at the bending radius of a few millimeters for an island backplane architecture, and the conventional structured inorganic backplanes underwent a significant change in electromechanical feature under the mechanical cyclic bending stress. The stress analysis on the bended surface and the stability behaviors of plastic backplanes embedded in different configurations also showed that the mesh-like islanded geometry in a bending system willingly helped to release the accumulated sheer stress in the thin films. |
| Databáze: | OpenAIRE |
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