Autor: T. Skauli, E. O'Keefe, P. Capper, J. E. Gower, C. D. Maxey
Rok vydání: 1999
Předmět:
Zdroj: Journal of Materials Science: Materials in Electronics. 10:589-593
ISSN: 0957-4522
DOI: 10.1023/a:1008989625156
Popis: Epitaxial layers of CdxHg1−xTe (CMT) are grown onto Cd1−yZnyTe (CZT) substrates in order to minimize misfit dislocations at the growth interface. For long wavelength focal plane array infrared detector requirements x = 0.22 CMT is nominally lattice matched to CZT alloys with y ~ 0.04. However, the rate of change of lattice parameter, as a function of y, means that the uniformity and definition of the required Zn concentration is important. We report here a non-contact, non-destructive technique for screening/mapping CZT substrates using the near infrared (NIR) band edge cut-on, defined by the wavelength corresponding to an absorption coefficient (α) = 10cm−1, which automatically corrects for thickness or transmission variations. Details of the experimental set-up and a novel holder for vertical mounting of substrates are given. A comparison of results from this technique and X-ray diffraction (XRD) lattice parameter data is also presented.
Databáze: OpenAIRE