Autor: | T. Skauli, E. O'Keefe, P. Capper, J. E. Gower, C. D. Maxey |
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Rok vydání: | 1999 |
Předmět: |
Diffraction
Materials science business.industry Near-infrared spectroscopy Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Wavelength Lattice constant Optics Attenuation coefficient Lattice (order) Infrared detector Electrical and Electronic Engineering business |
Zdroj: | Journal of Materials Science: Materials in Electronics. 10:589-593 |
ISSN: | 0957-4522 |
DOI: | 10.1023/a:1008989625156 |
Popis: | Epitaxial layers of CdxHg1−xTe (CMT) are grown onto Cd1−yZnyTe (CZT) substrates in order to minimize misfit dislocations at the growth interface. For long wavelength focal plane array infrared detector requirements x = 0.22 CMT is nominally lattice matched to CZT alloys with y ~ 0.04. However, the rate of change of lattice parameter, as a function of y, means that the uniformity and definition of the required Zn concentration is important. We report here a non-contact, non-destructive technique for screening/mapping CZT substrates using the near infrared (NIR) band edge cut-on, defined by the wavelength corresponding to an absorption coefficient (α) = 10cm−1, which automatically corrects for thickness or transmission variations. Details of the experimental set-up and a novel holder for vertical mounting of substrates are given. A comparison of results from this technique and X-ray diffraction (XRD) lattice parameter data is also presented. |
Databáze: | OpenAIRE |
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