Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge

Autor:	Shin-ichiro Sato, Masafumi Yamaguchi, Tatsuya Takamoto, Mohamed Elnawawy, Chiharu Morioka, Takuo Sasaki, Tarek Eldesuky, Mitsuru Imaizumi, Takeshi Ohshima, Dalia Elfiky, Ahmed Ghitas
Rok vydání:	2010
Předmět:	Proton Chemistry Doping General Engineering Radiative transfer General Physics and Astronomy Carrier lifetime Atomic physics Base (exponentiation) Recombination Radiation resistance Ingap gaas
Zdroj:	Japanese Journal of Applied Physics. 49:121202
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.49.121202
Popis:	National Institute for Astronomy and Geophysics Research, Helwan, Cairo 11421, EgyptReceived July 30, 2010; revised September 13, 2010; accepted October 1, 2010; published online December 20, 2010GaAs solar cells with the lower base carrier concentration under low energy proton irradiations had shown experimentally the better radiation-resistance. Analytical model based on fundamental approach for radiative and non-radiative recombination has been proposed for radiationdamage in GaAs sub-cells. The radiation resistance of GaAs sub-cells as a function of base carrier concentration has been analyzed by usingradiative recombination lifetime and damage coefficient for minority carrier lifetime. Numerical analysis shows good agreement with experimentalresults. The effect of carrier concentration upon the change of damage constant and carrier removal rate have been studied.# 2010 The Japan Society of Applied PhysicsDOI: 10.1143/JJAP.49.121202
Databáze:	OpenAIRE
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