Influence of growth temperature on physical properties of ZnO films produced by pulsed laser deposition method
| Autor: | A. A. Lotin, F. V. Lebedev, Oleg Alexeyevic Novodvorsky, Dmitry Zuev, Johann W. Bartha, L. S. Parshina, Christian Wenzel, Olga D. Khramova |
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| Rok vydání: | 2013 |
| Předmět: |
Diffraction
Materials science Organic Chemistry Analytical chemistry chemistry.chemical_element Zinc Epitaxy Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Pulsed laser deposition Inorganic Chemistry chemistry law Monolayer Surface roughness Sapphire Electrical and Electronic Engineering Physical and Theoretical Chemistry Spectroscopy |
| Zdroj: | Optical Materials. 35:1564-1570 |
| ISSN: | 0925-3467 |
| Popis: | The dependence has been investigated of electrical, optical and structural properties of undoped ZnO films grown on single-crystal c -sapphire substrates by pulsed laser deposition on the substrate temperature in the range between 50 °С and 650 °С. It has been shown that an increase in energy density of laser radiation at the target surface leads to lowering of the temperature of epitaxial growth of zinc oxide films. The surface roughness of the films produced at the substrate temperature of 450 °C does not exceed several monolayers, and the width of X-ray diffraction peaks 2 Θ at half maximum near the lattice site (00.2) makes 0.035°. |
| Databáze: | OpenAIRE |
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