Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications
| Autor: | Chenggang Xie, Anthony M. Pavio |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Maximum power principle
business.industry Computer science Band gap Amplifier dBm RF power amplifier Bandwidth (signal processing) Electrical engineering Distributed amplifier Power bandwidth Distributed power Gallium nitride High-electron-mobility transistor chemistry.chemical_compound chemistry Hardware_INTEGRATEDCIRCUITS Electronic engineering Linear amplifier business Monolithic microwave integrated circuit Photonic crystal |
| Zdroj: | MILCOM 2007 - IEEE Military Communications Conference. |
| DOI: | 10.1109/milcom.2007.4455083 |
| Popis: | Implementing wide bandgap GaN HEMT device into broadband distributed power amplifier creates a tremendous opportunity for RF designers to develop high power high efficiency very broadband power amplifiers for military applications. Several prototypes of 10-40 W GaN based distributed power amplifiers, including MMIC distributed PA, are currently under the development at Rockwell Collins, Inc. In this paper, we will discuss the results of a 10 W distributed power amplifier with the maximum power output of more than 40 dBm and a power-added efficiency of 30-70% over the bandwidth of 20-2000 MHz. |
| Databáze: | OpenAIRE |
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