Titanium and aluminum-titanium ohmic contacts to p-type SiC
| Autor: | Suzanne E. Mohney, E. D. Luckowski, J. M. Delucca, John R. Williams, L. Beyer, J. Crofton |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Annealing (metallurgy) Doping Alloy Metallurgy Contact resistance chemistry.chemical_element engineering.material Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Aluminium Materials Chemistry engineering Electrical and Electronic Engineering Composite material Ohmic contact Sheet resistance Titanium |
| Zdroj: | Solid-State Electronics. 41:1725-1729 |
| ISSN: | 0038-1101 |
| Popis: | Very low resistance ohmic contacts to p-type SiC were fabricated by depositing a 90-10 wt.% alloy of Al and Ti followed by a high temperature anneal of approximately 1000°C for 2 min. Specific contact resistances ranged from approximately 5 × 10 −6 to 3 × 10 −5 Ω cm 2 on material with a doping of 1.3 × 1019 cm−3. The initial AlTi thickness before annealing was found to be critical to controlling the AlTi sheet resistance during the anneal. In addition, chemically etching the AlTi layer after annealing revealed pitting indicative of severe reaction between the AlTi and SiC surface, as confirmed by Rutherford Backscattering. In contrast, ohmic contacts to the same SiC material were fabricated by depositing pure Ti and annealing at 800°C for 1 min. These contacts were ohmic with a specific contact resistance between 2 × 10 −5 and 4 × 10 −5 Ω cm 2 . Examination of the SiC surface after chemically etching away the annealed contact revealed a smooth surface, suggesting a much more planar Ti/SiC interface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect