Observation and electronic characterization of twoE’ center charge traps in conventionally processed thermal SiO2on Si

Autor:	H. L. Evans, T. J. Morthorst, Patrick M. Lenahan, John F. Conley, R. K. Lowry
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) Charge (physics) Electronic structure Molecular physics Resonance (particle physics) Characterization (materials science) law.invention Nuclear magnetic resonance law Thermal Thin film Electron paramagnetic resonance Order of magnitude
Zdroj:	Applied Physics Letters. 65:2281-2283
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112718
Popis:	We demonstrate that at least two varieties of E’ defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E’γp. We find that EP defect capture cross sections exceed the corresponding E’γp values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E’γp defects, and that the EP resonance, unlike the E’γp resonance is not stable at room temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::16a36590cd2b27456298bd055d813a36 https://doi.org/10.1063/1.112718 Zobrazit plný text záznamu