30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current

Autor:	Costin Anghel, Hraziia, Amita Gupta, Andrei Vladimirescu, Amara Amara
Rok vydání:	2011
Předmět:	Materials science Ambipolar diffusion business.industry Transistor Electrical engineering Low-k dielectric Ion current Electronic Optical and Magnetic Materials law.invention Tunnel effect CMOS law Logic gate Optoelectronics Field-effect transistor Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Electron Devices. 58:1649-1654
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2011.2128320
Popis:	This paper presents the optimization of double-gate silicon (Si) tunnel field-effect transistors (TFETs). It shows that, for the heterodielectric structure, the ION current is boosted by correctly positioning the source with respect to the gate edge. The second booster used in this paper is the Si thickness that is tuned in order to maximize the ION current. The effects that lead to the performance increase are explained on a physical basis. We also demonstrate that the ambipolar character of the TFET is completely inhibited by using only one spacer of 30-nm length to separate the drain and the gate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::16a2ac63cd60e33bbf13f17387231857 https://doi.org/10.1109/ted.2011.2128320 Zobrazit plný text záznamu