A 10 VPP SiGe voltage driver

Autor: Ch. Scheytt, Valeriy Stikanov, Hans Gustat, P. Ostrovskyy
Rok vydání: 2010
Předmět:
Zdroj: 2010 20th International Crimean Conference "Microwave & Telecommunication Technology".
DOI: 10.1109/crmico.2010.5632831
Popis: This paper presents the design and implementation of the high output swing voltage driver. Designed and fabricated in 0.25 um SiGe BiCMOS technology the driver delivers 10 Vpp output differential voltage swing at 2 Gb/s. The power consumption of the driver is 1.6 W. Measurement results show that the circuit is well suited for processing a bit stream up to 3.4 Gb/s and can be used as a driver for switch-mode amplifiers based on the transistors required high on-voltage.
Databáze: OpenAIRE