Autor: |
Ch. Scheytt, Valeriy Stikanov, Hans Gustat, P. Ostrovskyy |
Rok vydání: |
2010 |
Předmět: |
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Zdroj: |
2010 20th International Crimean Conference "Microwave & Telecommunication Technology". |
DOI: |
10.1109/crmico.2010.5632831 |
Popis: |
This paper presents the design and implementation of the high output swing voltage driver. Designed and fabricated in 0.25 um SiGe BiCMOS technology the driver delivers 10 Vpp output differential voltage swing at 2 Gb/s. The power consumption of the driver is 1.6 W. Measurement results show that the circuit is well suited for processing a bit stream up to 3.4 Gb/s and can be used as a driver for switch-mode amplifiers based on the transistors required high on-voltage. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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