Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance
| Autor: | Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Dongqing Hu, Yu Wu, Zhonghan Deng |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 62:044002 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.35848/1347-4065/accb22 |
| Popis: | In this paper, a novel SiC trench-gate MOSFET with integrated heterojunction diode (HD-TG-MOS) is proposed and studied according to TCAD simulations. The n-type polysilicon/n-type SiC HD is introduced into the groove by the direct contact between the polysilicon and semiconductor. As a result, significant improvements of device performance in the first and third quadrants are observed as compared to the conventional SiC trench-gate MOSFET (C-TG-MOS). Better yet, aided by the extremely low barrier height across the heterojunction, the knee voltage reduces to only 0.5 V with comparison of that of ∼2.7 V for the body diode, when used for reverse freewheeling. These promotions make SiC HD-TG-MOS more advantageous for HF power conversion applications. In addition, another cell architecture variant adopting a similar concept is presented, and the according process implementation is addressed as well from viewpoint of manufacture. |
| Databáze: | OpenAIRE |
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