Autor: |
Wan Jae Park, Chung-Gon Yoo, Hyoun Woo Kim, Chin-Wook Chung, Dae-Kyu Choi, Chang-Jin Kang, Nam Ho Kim, Ju Hyun Myung |
Rok vydání: |
2005 |
Předmět: |
|
Zdroj: |
Vacuum. 80:193-197 |
ISSN: |
0042-207X |
Popis: |
The characteristics of photoresist (PR) ashing using N 2 plasmas in a ferrite core inductively coupled plasma etcher have been studied and the effect of bias power and gas flow rate on PR ash rate and low- k material etch rate has been investigated. Fourier transform infrared spectroscopy revealed that the ashing process with N 2 gas produced less damage to the low- k material compared to the process with O 2 gas. The HF etch test was used to evaluate the ash damage to the low- k material. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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