Photoluminescence of excitons bound to the radiation damage deffects B41 (1.1509 eV) in silicon

Autor:	V. A. Karasyuk, M. L. W. Thewalt, A. S. Kaminskii, E. V. Lavrov
Rok vydání:	1996
Předmět:	Materials science Photoluminescence Silicon Phonon Exciton chemistry.chemical_element General Chemistry Condensed Matter Physics Crystallographic defect Condensed Matter::Materials Science chemistry Bound state Materials Chemistry Irradiation Atomic physics Spectroscopy
Zdroj:	Solid State Communications. 97:137-142
ISSN:	0038-1098
DOI:	10.1016/0038-1098(95)00614-1
Popis:	Using photoluminescence spectroscopy in magnetic fields up to 12 T, we show that the very shallow isoelectronic centers B41 (1.15090 eV principal no phonon line) created by a neutron irradiation in a phosphorus-doped silicon grown in a hydrogen atmosphere have the C3v symmetry. We explain the structure of the energy levels of the excitons bound to these centers and determine their lifetime and g-factors of the bound particles.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::168f1ed288d47e5fc6e76bda775ff758 https://doi.org/10.1016/0038-1098(95)00614-1 Zobrazit plný text záznamu Full Text from ScienceDirect