High-resolution 3D X-ray Microscopy for Structural Inspection and Measurement of Semiconductor Package Interconnects
| Autor: | Yanjing Yang, Bernice Zee, Weijie Lee, Allen Gu, Gregorich Thomas, Terada Masako, Syahirah Mohammad-Zulkifli |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
business.industry
Computer science Process (computing) Bridging fault Semiconductor package 02 engineering and technology Repeatability 021001 nanoscience & nanotechnology 020202 computer hardware & architecture Visualization Workflow Microscopy 0202 electrical engineering electronic engineering information engineering Device under test 0210 nano-technology business Computer hardware |
| Zdroj: | 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA). |
| DOI: | 10.1109/ipfa47161.2019.8984854 |
| Popis: | 3D X-ray Microscopy (XRM) has become an established failure analysis (FA) tool for bridging fault isolation and physical failure analysis (PFA) because it enables the visualization of defects without destroying the device under test (DUT). Through workflow improvements, it offers the opportunity to improve process characterization and device qualifications. This paper describes the application of new automated scanning and image acquisition capability for repetitive XRM device inspection in defined regions of interest (ROI). Results obtained from two test matrices showed good positioning repeatability meeting accuracy requirements for both small and medium-sized test vehicles with fast acquisition times. |
| Databáze: | OpenAIRE |
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