Preparation and properties of amorphous TiO2 thin films by plasma enhanced chemical vapor deposition
| Autor: | Seong Ihl Woo, Soo Han Choi, Jong Choul Kim, Won Gyu Lee, Kye Hwan Oh |
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| Rok vydání: | 1994 |
| Předmět: |
Auger electron spectroscopy
Chemistry Metals and Alloys Analytical chemistry Surfaces and Interfaces Chemical vapor deposition Combustion chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Carbon film Amorphous carbon Plasma-enhanced chemical vapor deposition Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 237:105-111 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(94)90245-3 |
| Popis: | Titanium dioxide (TiO2) thin films were prepared on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using Ti(OiC3H7)4 and oxygen. PECVD of TiO2 films has been evaluated with various process parameters. The characteristics of films were investigated by X-ray diffraction, scanning electron microscopy, TG/DTA, FTIR, UV/visible spectroscopy and Auger electron spectroscopy. Typical as-deposited film was amorphous and transparent with a refractive index of 2.05. As the deposition time increased, surface morphology became coarser, and structure was transformed from amorphous to mixtures of amorphous and crystal. As-deposited amorphous TiO2 films had a dielectric constant of 13.7 and flat-band voltage of −1.3 V. The effects of post-treatment through N2 or O2 plasma on the electrical properties of as-deposited films were evaluated. Electrical properties could be enhanced by O2 plasma treatment. |
| Databáze: | OpenAIRE |
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