| Autor: |
Pai Chuan Yang, Wen Shiush Chen, Jenn Sen Lin, Cheng-Hsing Hsu |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
Advanced Materials Research. 486:345-349 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.486.345 |
| Popis: |
Microstructure, optical and electrical properties of ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different argon-oxygen (Ar/O2) mixture have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the Ar/O2 ratio. Optical transmittance spectroscopy further revealed high transparency (over 70%) in the visible region of the spectrum. At an Ar/O2 ratio of 100/0 and a substrate temperature of 400°C, the ZnO-doped (Zr0.8Sn0.2)TiO2 films possess a dielectric constant of 44 at 10 MHz, a dissipation factor of 0.03 at 10 MHz, a leakage current density of 3.73×10-9 A/cm2. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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