Si tight-binding parameters from genetic algorithm fitting

Autor:	Timothy B. Boykin, Adrian Stoica, C. Salazar-Lazaro, Gerhard Klimeck, Thomas A. Cwik, R. Chris Bowen
Rok vydání:	2000
Předmět:	Physics Condensed matter physics Discretization Electronic structure Condensed Matter Physics Atomic units Effective mass (solid-state physics) Tight binding Genetic algorithm General Materials Science Statistical physics Electrical and Electronic Engineering Electronic band structure Quantum
Zdroj:	Superlattices and Microstructures. 27:77-88
ISSN:	0749-6036
DOI:	10.1006/spmi.1999.0797
Popis:	Quantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry in them and they can discretize a realistic device on an atomic scale.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::165380aa86e6c93eeb2e4032d746dc5b https://doi.org/10.1006/spmi.1999.0797 Zobrazit plný text záznamu Full Text from ScienceDirect