Mathematical modeling of the physical mechanism of the formation of a bulk surface charge in semiconductors for intelligent frequency sensors for gas concentration
| Autor: | A.V. Osadchuk, V.S. Osadchuk, Ya.A. Osadchuk |
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| Rok vydání: | 2019 |
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| Zdroj: | Optoelectronic information-power technologies. 38:107-112 |
| ISSN: | 2311-2662 1681-7893 |
| Databáze: | OpenAIRE |
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