Novel degradation model of MOSFET thin gate oxide induced by VUV photons during high density plasma oxide deposition
| Autor: | Moojin Kim, Dong-Kwon Kim, Jeong-Yun Lee, Gyung-jin Min |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Gate dielectric Analytical chemistry Oxide Time-dependent gate oxide breakdown Equivalent oxide thickness Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films law.invention Computer Science::Hardware Architecture Condensed Matter::Materials Science Capacitor chemistry.chemical_compound chemistry Gate oxide law MOSFET Materials Chemistry Optoelectronics Field-effect transistor business |
| Zdroj: | Surface and Coatings Technology. 228:S511-S515 |
| ISSN: | 0257-8972 |
| Popis: | The vacuum ultraviolet (VUV) induced damage on gate oxide of metal–oxide–semiconductor field effect transistor in the high density plasma during a oxide deposition has been a serious issue in fabricating DRAM and flash memory devices with high-density integration. There have been some previous reports on the VUV-induced damage. These models however did not give an in-depth explanation of the charging of the carriers into floating gate during dielectric deposition. In this work, a novel charge separation model has been proposed to explain the degradation of gate dielectric oxide. Experiment has been carried out on the test vehicles, which consists of the metal–oxide–semiconductor capacitors with various charge collecting antennas, with different energy band-gaps and oxide thicknesses, to investigate the charge separation in the dielectrics covering the gate. Also the materials of the different band-gap were used, as the sub-layer of high-density-plasma oxide, for potential barriers to make the charge separation from electron hole-pairs. Electrical tests have been performed to measure the gate-oxide degradation induced by the floating gate charging from plasma VUV radiation. Experimental results are shown to be in agreement with expectation. |
| Databáze: | OpenAIRE |
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