Change in the phase growth rates in Cu-Si films subjected to ion implantation
| Autor: | M.E. Shpilevsky, M.A. Andreev, E.M. Shpilevsky |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Auger electron spectroscopy
Materials science Argon Annealing (metallurgy) Nucleation Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Ion Crystallography Ion implantation chemistry Materials Chemistry Grain boundary Growth rate |
| Zdroj: | Surface and Coatings Technology. :937-940 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/0257-8972(95)08339-1 |
| Popis: | As the methods of X-ray phase analysis and Auger spectroscopy have revealed, argon ions implanted into Cu-Si films cause the temperature of nucleation of silicides (Cu 5 Si and Cu 3 Si) to decrease by approximately 80 K. On implantation under mixing conditions the Cu 15 Si 4 phase, not observed in annealing of non-implanted film samples, grows together with the Cu 3 Si and Cu 5 Si phases. Kinetics of the growth of the phases is characterized by a parabolic dependence. Ion implantation does not change the type of the kinetics of phase growth. The new phase grows from grain boundaries into a grain throughout the entire thickness of Cu and Si layers. The growth rate of the phases depends on the position of the concentration maximum of ion-implantation-induced defects. |
| Databáze: | OpenAIRE |
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