| Autor: |
Simone Raoux, Jau-Yi Wu, Matthew J. Breitwisch, Huai-Yu Cheng, Frieder H. Baumann, Ming-Hsiu Lee, Erh-Kun Lai, Roger W. Cheek, Y.H. Shih, H.L. Lung, A. G. Schrott, Chieh-Fang Chen, John Bruley, C. Lam, Yu Zhu, Eric A. Joseph |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2010.5703440 |
| Popis: |
The high current density induced failure in Ge 2 Sb 2 Te 5 (GST)-based phase change memory (PCM) is investigated. A strong dependence of cycling endurance on the polarity of the operation current is observed and reported for the first time. The cycling endurance is reduced by 4 orders of magnitude when the current polarity is reversed. Careful TEM analysis of failed cells revealed a thin void in GST over the bottom electrode, but only in the reverse polarity samples. This phenomenon can be explained by hole-induced electromigration at the electrode/GST interface. The impact of electromigration on scaled phase change memory is discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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