Unbiased roughness measurements: Subtracting out SEM effects
| Autor: | Gian Francesco Lorusso, Vito Rutigliani, Chris A. Mack, Frieda Van Roey |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Pixel business.industry Scanning electron microscope 02 engineering and technology Surface finish Edge (geometry) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Noise (electronics) Atomic and Molecular Physics and Optics Edge detection Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metrology 010309 optics Optics Feature (computer vision) 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Microelectronic Engineering. 190:33-37 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2018.01.010 |
| Popis: | Most scanning electron microscope (SEM) measurements of pattern roughness today produce biased results, combining the true feature roughness with noise from the SEM. Further, the bias caused by SEM noise changes with measurement conditions and with the features being measured. The goal of unbiased roughness measurement is to both provide a better estimate of the true feature roughness and to provide measurements that are independent of measurement conditions. Using an inverse linescan model for edge detection, the noise in SEM edge and width measurements can be measured and removed statistically from roughness measurements. This approach was tested using different pixel sizes, magnifications, and frames of averaging on several different post-lithography and post-etch patterns. Over a useful range of metrology conditions, the unbiased roughness measurements were effectively independent of these metrology parameters. |
| Databáze: | OpenAIRE |
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