Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon
| Autor: | David J. Smith, Chiyu Zhu, Sean L. Caudle, Robert J. Nemanich, Jialing Yang |
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| Rok vydání: | 2014 |
| Předmět: |
Phase transition
Materials science Silicon Band gap Process Chemistry and Technology Analytical chemistry chemistry.chemical_element Substrate (electronics) Semimetal Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Materials Chemistry Electrical and Electronic Engineering Metal–insulator transition Instrumentation Layer (electronics) Ultraviolet photoelectron spectroscopy |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:011203 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.4832341 |
| Popis: | Vanadium dioxide (VO2) is a narrow band gap material that undergoes a metal-insulator phase transition at ∼343 K with evidence of an electric-field induced transition at T |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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