Room temperature oxidation of silicon induced by UV irradiation of Cu3Si
| Autor: | F. Emmi, L.J. Matienzo, J. W. Mayer, Jian Li |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Silicon
Silicon dioxide Analytical chemistry chemistry.chemical_element Condensed Matter Physics medicine.disease_cause chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Transmission electron microscopy medicine General Materials Science Surface layer Irradiation Thin film Ultraviolet |
| Zdroj: | Materials Chemistry and Physics. 32:390-393 |
| ISSN: | 0254-0584 |
| DOI: | 10.1016/0254-0584(92)90186-c |
| Popis: | Thick silicon dioxide films were prepared by room temperature oxidation of Si(100) induced by Cu 3 Si. This Cu 3 Si-enhanced oxidation process is accelerated by ultraviolet (UV) light irradiation. Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to characterize the chemical and structural properties of the silicon dioxide layer underneath the oxidized Cu 3 Si surface layer. The resulting films of silicon dioxide are denser and stoichiometric when silicon oxidation proceeds under UV irradiation at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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