3D structures with piezoresistive sensors in standard CMOS

Autor:	Ezekiel Kruglick, Jason W. Weigold, Eric G. Hoffman, B. Warneke, Kristofer S. J. Pister
Rok vydání:	2005
Předmět:	Materials science Silicon Transistor Xenon difluoride Hinge chemistry.chemical_element Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Piezoresistive effect law.invention chemistry.chemical_compound Xenon CMOS chemistry law Etching (microfabrication) Hardware_INTEGRATEDCIRCUITS
Zdroj:	Proceedings IEEE Micro Electro Mechanical Systems. 1995.
DOI:	10.1109/memsys.1995.472608
Popis:	Aluminum hinges and polysilicon piezoresistors have been fabricated in a standard commercial CMOS process with one maskless post-processing step. The hinges and piezoresistors are formed using the metal interconnect and transistor gate layers in the CMOS process. Xenon difluoride is shown to be a simple and effective alternative to standard bulk etchants for this process, because of its extreme selectivity and gentle gas phase etch. Preliminary results from a piezoresistive accelerometer are given.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::161236503045acadddc4e187ee931900 https://doi.org/10.1109/memsys.1995.472608 Zobrazit plný text záznamu