The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes

Autor:	S. S. Lau, L. S. Yu, Joan M. Redwing, Q. J. Xing, Q. Z. Liu, D. Qiao
Rok vydání:	1998
Předmět:	Materials science Component (thermodynamics) business.industry Schottky barrier Schottky effect General Physics and Astronomy Schottky diode Metal–semiconductor junction Metal visual_art visual_art.visual_art_medium Optoelectronics Current (fluid) business Quantum tunnelling
Zdroj:	Journal of Applied Physics. 84:2099-2104
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.368270
Popis:	The temperature dependence of the current–voltage characteristics of Ni–GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.
Databáze:	OpenAIRE
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