Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric
| Autor: | Chun-Heng Chen, Ling-Yen Yeh, Ingram Yin-Ku Chang, Joseph Ya-min Lee |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Hardware_PERFORMANCEANDRELIABILITY Dielectric law.invention Metal Capacitor Reliability (semiconductor) Oxide semiconductor Hardware_GENERAL law Percolation visual_art Hardware_INTEGRATEDCIRCUITS visual_art.visual_art_medium Optoelectronics business Hardware_LOGICDESIGN Weibull distribution High-κ dielectric |
| Zdroj: | Applied Physics Letters. 95:162902 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.3250242 |
| Popis: | In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the corresponding Weibull slopes, β, of the MOS capacitors with various LaAlO3 thicknesses were calculated. In addition, a modified percolation model was proposed to consider the extrinsic factors of breakdown. These extrinsic factors were described by an equivalent reduction of the path-to-breakdown, tex, in the model. Using this model, the calculated tex of the MOS capacitor was 5.8 nm. |
| Databáze: | OpenAIRE |
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